IXD75IF650NA tentative copack trench igbt (medium speed) xpt igbt 2(c) 3(e) (g) 1 part number IXD75IF650NA c25 ce(sat) vv 1.5 ces 75 650 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 2x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXD75IF650NA tentative -di /dt = a/s t = c v ces v 650 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 75 a c vj symbol definition ratings typ. max. min. conditions unit tbd v v ce(sat) total power dissipation tbd w collector emitter leakage current 6.5 v turn-on delay time 25 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 150 tbd t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 1.7 1.75 5.8 5 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 130 nc t t t e e d(on) r d(off) f on off 45 ns 120 ns 40 ns 1.1 mj 1.7 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 650 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 300 a r thjc thermal resistance junction to case tbd k/w v rrm v 650 max. repetitive reverse voltage t = 25c vj t = 25c forward current a tbd a c tbd t = c c i f25 i f t = 25c forward voltage v 2.00 v vj 1.80 t = 125c vj v f i = a f t = 25c reverse current ma 0.15 ma vj 0.75 t = 125c vj i r r rrm t = 125c vj q i t rr rm rr 7 c 55 a 100 ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec 1.5 mj reverse recovery energy r r thjc thermal resistance junction to case 1 k/w v = v t = 25c c t = 25c vj t = c vj vj 75 1.2 75 75 75 75 10 10 10 300 360 1200 300 i cm 1.5 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w igbt diode 300 v v = v cemax 360 100 100 100 100 150 150 150 150 150 na 0.10 0.10 ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXD75IF650NA tentative 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). in case of (1) and a pr oduct with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. ratings abcd zyyww xxxxx product marking logo part no. datecode assembly code assembly line ? i x d 75 if 650 na part number igbt xpt igbt trench 1 / std copack sot-227b (minibloc) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.5 mounting torque 1.1 t vj c 175 virtual junction temperature -40 weight g 30 symbol definition typ. max. min. conditions operation temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 150 -40 terminal to terminal sot-227b ( minibloc ) delivery mode quantity code no. part number marking on product ordering 1 ) 50/60 hz, rms; i 1 ma isol IXD75IF650NA 513716 tube 10 IXD75IF650NA standard 3000 isol t stg c 150 storage temperature -40 2500 threshold voltage v m ? v 0 max r 0 max slope resistance * equivalent circuits for simulation t = vj i v 0 r 0 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXD75IF650NA tentative 2(c) 3(e) (g) 1 outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXD75IF650NA tentative 0123 0 20 40 60 80 100 120 140 0 40 80 120 160 0.0 0.8 1.6 2.4 3.2 4.0 012345 0 20 40 60 80 100 120 140 v ce [v] i c [a] q g [nc] v ge [v] 9v 11 v 5 6 7 8 9 101112131415 0 40 80 120 160 200 0 40 80 120 160 200 0 5 10 15 20 13 v 4 8 12 16 20 24 0.4 0.8 1.2 1.6 2.0 2.4 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e off fi g .6 t y p .switchin g ener gy vs. g ate resistance r g [ ] e [mj] i c [a] e on e off t vj = 125c t vj = 25c v ge =15v t vj = 125c t vj = 25c t vj =150c i c =75a v ce =300v i c = 75 a v ce = 300 v v ge = 15 v t vj =150c r g =10 v ce = 300 v v ge =15v t vj =150c igbt ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXD75IF650NA tentative 400 600 800 1000 1200 1400 1600 1800 2000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 01234 0 50 100 150 q rr [ c] i f [a] v f i d ] v [ f /dt [a/ s] 10 a 75 a 40 a fig. 1 typ. forward current versus v f fig. 2 typ. reverse recov.charge q rr vs. di/dt 400 600 800 1000 1200 1400 1600 1800 2000 10 20 30 40 50 60 70 i rr [a] di f /dt [a/ s] 40 a 10 a 75 a fig. 3 typ. peak reverse current i rm vs. di/dt 400 600 800 1000 1200 1400 1600 1800 2000 40 80 120 160 200 t rr [ns] di f /dt [a/ s] 10 a 40 a 75 a fig. 4 typ. recovery time t rr versus di/dt fig. 5 typ. recovery energy e rec versus di/dt 400 600 800 1000 1200 1400 1600 1800 2000 100 200 300 400 500 600 700 e rec [ j] di f /dt [a/ s] 10 a 75 a 40 a t vj =150c t vj = 25c t vj = 150c v r =300 v t vj = 150c v r = 300 v t vj = 150c v r =300 v t vj = 150c v r =300 v fig. 6 dynamic parameters q rr ,i rr vs. t vj 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 k f t vj [c] i rr q rr 75 a 300 v 1200 a/s diode ixys reserves the right to change limits, conditions and dimensions. 20131204 data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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